Abstract
Titanium dioxide has wide area of applications ranging from CMOS to photocatalyst upto self cleaning glass and solar panels. The Sol-Gel spin coating technique is most attractive technique due to its so many advantages such as easy preparation method, less complicating instruments and less time consuming. The Sol-Gel spin coating was successfully used for doped TiO2 thin films deposition on silicon wafer followed by annealing processes. TiO2 thin films were deposited on silicon wafer using sol-gel technique. These deposited films can be characterized by various methods such as X-ray diffraction (XRD), surface profilometer, ellepsometer and ultraviolet visible spectroscopy. The XRD can be used to show the presence of anatase TiO2 phase in the films deposited. The UV spectroscopy can be used to lookout the shifting of absorption edges of TiO2 film towards visible light region which depends solely on doping concentration. The mechanism of depositing a thin film of TiO2 with different doping materials with different concentration is discussed here in this paper.