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Device Characteristics of InGaN Quantum Well Light-Emitting Diodes with AlInN Thin Barrier Insertion
Conference proceeding

Device Characteristics of InGaN Quantum Well Light-Emitting Diodes with AlInN Thin Barrier Insertion

Guangyu Liu, Jing Zhang, Hongping Zhao and Nelson Tansu
GALLIUM NITRIDE MATERIALS AND DEVICES VII, Vol.8262(1), pp.82621F-82621F-6
Proceedings of SPIE
01/01/2012
DOI: https://doi.org/10.1117/12.909633

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (similar to 1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

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