Abstract
The magnesium doped ZnO polycrystalline thin film (Zn0.75Mg0.25O) film was grown by sol-gel method on p-type silicon substrate. The film was annealed at 1000 degrees C in oxygen rich environment. The aluminum thin layer was used for back contact and Indium dots were used for top contacts. The doping of magnesium in lattice structure of Zinc oxide was examined by Xray spectra. The ferroelectricity in the deposited film was confirmed by polarization and electric field (PIE) curve showing a well defined hysteresis loop. Maximum value of the spontaneous polarization (Ps) and coercive field was found to be 0.29 mu C/Cm-2 and 18 kV/cm respectively. The clockwise rotation in capacitance and voltage (C-V) hysteresis loop of the deposited film on p-type Si was indicated that the charge compensation on the Si surface was induced by the ferroelectric polarization existed in the film. The grain size and grain structure was analyzed by atomic force microscopy.