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Dielectric property and breakdown study of metal-insulator-metal capacitor
Conference proceeding

Dielectric property and breakdown study of metal-insulator-metal capacitor

M.K. Hota, C. Mahata, S. Mallik, C.K. Sarkar and C.K. Maiti
2009 4th International Conference on Computers and Devices for Communication (CODEC), pp.1-4
12/2009

Abstract

Atomic layer deposition Capacitance Dielectric breakdown Dielectric constant Gold High-k High-K gate dielectrics Hysteresis Leakage current MIM capacitor MIM capacitors Radio frequency Semiconductor films TaAlO x Weibull
Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlO x dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of EOT on the breakdown of the MIM capacitors.

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