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Dilute-As GaNAs Semiconductor for Visible Emitters
Conference proceeding

Dilute-As GaNAs Semiconductor for Visible Emitters

Chee-Keong Tan, Jing Zhang, Xiao-Hang Li, Guangyu Liu, Nelson Tansu and IEEE
2012 IEEE PHOTONICS CONFERENCE (IPC), pp.695-696
IEEE Photonics Conference
01/01/2012
DOI: https://doi.org/10.1109/IPCon.2012.6358812

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
First-principle analysis of the band structure for dilute-As GaN1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.

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