Abstract
In this paper we report on the enhancement of optoelectrical properties of the porous silicon (PS) layer passivated with Lithium Bromide (LiBr), a simple method consist of immersion of the PS in dilute LiBr of aqueous solution followed by a thermal treatment at 100 degrees C under nitrogen can lead to an increase in the intensity of photoluminescence. The morphologies of the samples were studied by atomic force microscope (AFM) show that the immersion has a great effect on the diameter of the nano-particles of the PS. The experimental results of I-V measurements show an improvement in the series resistance, which decrease from 867 Omega to 236 Omega. We observed an enhancement of the Light Beam Induced Current (LBIC) after treatment with LiBr it assumed an increase in the minority carrier diffusion length (L), knowing that this method is efficient and has low cost surface treatment. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim