Abstract
The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.
The work is supported by KAUST under baseline funding and Competitive Research Grant CRG-1-2012-OOI-010. We acknowledge the
financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008