Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

Conference proceeding

Peer reviewed

K Ohkawa, T Karasawa and T Mitsuyu

Journal of crystal growth, Vol.111(1-4), pp.797-801

Molecular beam epitaxy 1990 : [selected papers], La Jolla, CA, USA, 27-31 August 1990

01/05/1991

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Physics

Solid surfaces and solid-solid interfaces

Surface and interface dynamics and vibrations

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

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Title: Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
Creators - without role: K Ohkawa - Panasonic
T Karasawa - Panasonic
T Mitsuyu - Panasonic
Publication Details: Journal of crystal growth, Vol.111(1-4), pp.797-801
Conference: Molecular beam epitaxy 1990 : [selected papers], La Jolla, CA, USA, 27-31 August 1990
Publisher: Elsevier
Identifiers: 9942117508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding