Abstract
This paper presents the design, fabrication and high frequency characterization of GeTe phase change material based double port double throw switch (DPDT) matrix using phase change materials. The material exhibits non-volatile conductivity changes between amorphous high resistance and crystalline low resistance state. Being non-volatile, these RF switches do not require permanent bias to be maintained in a given state. We present the design of 4-terminal RF switch and the integration of this structure into wideband DPDT matrices. The proposed device has less than 2 dB loss and more than 20 dB below 5 GHz. This matrix can retain its state without any applied bias.