Abstract
For the first time, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity. Two completely different metals deposited by atomic layer deposition have been integrated in a process that includes gate stack integration and dual metal gate etch. Excellent short channel characteristics with low drain induced barrier lowering (DIBL) and subthreshold swing Delta SS have been observed with fairly symmetric V-Th.