Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well

Xiaodong Mu; Yujie J. Ding; Boon S. Ooi; Mark Hopkinson; IEEE

Conference proceeding

Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well

Xiaodong Mu, Yujie J. Ding, Boon S. Ooi, Mark Hopkinson and IEEE

2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, p.2554

01/01/2007

Abstract

Engineering

Engineering, Electrical & Electronic

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well. (C) 2007 Optical Society of America

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Title: Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well
Creators - without role: Xiaodong Mu - Lehigh University
Yujie J. Ding - Lehigh University
Boon S. Ooi - Lehigh University
Mark Hopkinson - University of Sheffield
IEEE
Publication Details: 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, p.2554
Publisher: IEEE
Number of pages: 2
Grant note: AFOSR; United States Department of Defense; Air Force Office of Scientific Research (AFOSR) DARPA; United States Department of Defense; Defense Advanced Research Projects Agency (DARPA)
Identifiers: 9941932908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding