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EFFECT OF THE LENGTH OF SILICON NANO-DOT/WIRE ON BAND GAP
Conference proceeding

EFFECT OF THE LENGTH OF SILICON NANO-DOT/WIRE ON BAND GAP

Walid M. I. Hassan, Amit Verma, Reza Nekovei, Mahmoud M. Khader, M. P. Anantram and IEEE
2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), pp.373-376
01/01/2014
DOI: https://doi.org/10.1109/NANO.2014.6968131

Abstract

Computer Science Computer Science, Theory & Methods Engineering Engineering, Electrical & Electronic Nanoscience & Nanotechnology Science & Technology Science & Technology - Other Topics Technology
We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value.

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