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EPITAXIAL GROWTH OF HIGH QUALITY INAS/INGAALAS QUANTUM DASH-IN-WELL STRUCTURE ON INP
Conference proceeding

EPITAXIAL GROWTH OF HIGH QUALITY INAS/INGAALAS QUANTUM DASH-IN-WELL STRUCTURE ON INP

Y. Wang, H. S. Djie, V. Hongpinyo, C. L. Tan, B. S. Ooi, J. C. M. Hwang, X. -M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, …
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), p.167
International Conference on Indium Phosphide and Related Materials
01/01/2008
DOI: https://doi.org/10.1142/9789812835017_0008

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Optics Physical Sciences Science & Technology Technology
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial growth control of InAs/InGaAlAs/InP system for optical device applications.

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