Abstract
Zinc oxide (ZnO) nanostructures had successfully prepared using sol-gel immersion method. The tin (Sn) dopant concentration was varied between 0.4 to 2.0 at.%. The surface topography and electrical properties of the ZnO nanostructures were studied using atomic force microscopy (AFM) and current-voltage (IV) measurement. The highest conductivity of 1.68 x 10(2) Scm(-1) was obtained by 2.0 at.% sample. The Sn-doped ZnO sample is notably shortens the response time and recovery time with better sensitivity towards methane gas.