Abstract
The memristive behavior has been observed with Au and Pd metal nanodots embedded high-k dielectric films of Nb2O5. A superior control in terms of consistency during transition between two resistances states have been found for Pd embedded Nb2O5 devices as a consequence of better control of formation or rupture of conductive filaments. Direct surveillance of the formation or rupture of conductive filaments at nanoscale during memristive switching are performed using current imaging tunneling spectroscopy (CITS) technique as measured by scanning tunneling microscope.