- Title
- Effects of single vacancy defects on 1/f noise in graphene/h-BN FETs
- Creators - without role
- Ting Wu - NYU, Dept Elect & Comp Engn, Brooklyn, NY 11201 USAAbdullah Alharbi - NYU, Dept Elect & Comp Engn, Brooklyn, NY 11201 USATakashi Taniguchi - Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, JapanKenji Watanabe - Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, JapanDavood Shahrjerdi - NYU, Dept Elect & Comp Engn, Brooklyn, NY 11201 USAIEEE
- Publication Details
- 2018 76TH DEVICE RESEARCH CONFERENCE (DRC)
- Series
- IEEE Device Research Conference Proceedings
- Publisher
- IEEE
- Number of pages
- 2
- Grant note
- DE-SC0012704 / U.S. DOE Office of Science Facility at Brookhaven National Laboratory; United States Department of Energy (DOE) 1728051 / NSF-CMMI award
- Identifiers
- 9952209808331
- Academic Unit
- King Saud University
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
Effects of single vacancy defects on 1/f noise in graphene/h-BN FETs
2018 76TH DEVICE RESEARCH CONFERENCE (DRC)
IEEE Device Research Conference Proceedings
01/01/2018
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