Sign in
Back
Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport
Conference proceeding   Peer reviewed

Electrical Characterization of PiN Diodes with p(+) layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Veronique Souliere, Farah Laariedh, Jawad ul Hassan, Anne Henry, Erik Janzen, Dominique Planson, …
SILICON CARBIDE AND RELATED MATERIALS 2012, Vol.740-742, pp.911-914
Materials Science Forum
01/01/2013
DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.911

Abstract

Crystallography Materials Science Materials Science, Multidisciplinary Physical Sciences Science & Technology Technology
This paper deals with electrical characterization of PiN diodes fabricated on an 8 degrees off-axis 4H-SiC with a p(++) epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Metrics

1 Record Views

Details