Abstract
Ultra thin HfO2 high-k gate dielectric has been deposited directly on Si0.81Ge0.19 by the atomic layer deposition (ALD) process. HfO2 layers were characterized by grazing incidence x-ray diffraction (GIXRD) to examine crystallinity. In this work it is shown that MIS capacitors annealed in N-2 ambient show better electrical properties than the samples annealed in O-2 and mixed gas ambient (O-2 and N-2) and without annealing. Furthermore, trapping and detrapping behavior of charge carriers in N-2 annealed ultrathin HfO2 gate dielectrics during constant current stress (CCS) and constant voltage stress (CVS) has been investigated in detail.