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Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)(2)O-3 Schottky photodetectors grown on silicon by pulsed laser deposition
Conference proceeding

Electrical characterization of solar-blind deep-ultraviolet (Al0.28Ga0.72)(2)O-3 Schottky photodetectors grown on silicon by pulsed laser deposition

Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Davide Priante, Laurentiu Braic, Zaibing Guo, Tien Khee Ng, Xiaohang Li, Boon S. Ooi and IEEE
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Conference on Lasers and Electro-Optics
01/01/2019

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
This study reports on (Al0.28Ga0.72)(2)O-3-based ultraviolet-C Schottky metal-semiconductor- metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. (C) 2019 The Author(s)

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