Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

Conference proceeding

Peer reviewed

M. A Belaïd, K Ketata, M Masmoudi, M Gares, H Maanane and J Marcon

Microelectronics and reliability, Vol.46(9-11), pp.1800-1805

17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal, Germany, 3-6 October 2006

01/09/2006

Abstract

Applied sciences

Compound structure devices

Electrical engineering. Electrical power engineering

Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Electronics

Exact sciences and technology

Power electronics, power supplies

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests
Creators - without role: M. A Belaïd - Université de Rouen Normandie
K Ketata - Université de Rouen Normandie
M Masmoudi - Université de Rouen Normandie
M Gares - Université de Rouen Normandie
H Maanane - Université de Rouen Normandie
J Marcon - Université de Rouen Normandie
Publication Details: Microelectronics and reliability, Vol.46(9-11), pp.1800-1805
Conference: 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2006), Wuppertal, Germany, 3-6 October 2006
Publisher: Elsevier
Identifiers: 9930875408331
Academic Unit: Umm Al Qura University
Language: English
Resource Type: Conference proceeding