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Electrical properties of modulation doped Si/SiGe heterostructures grown on silicon on insulator substrates
Conference proceeding   Peer reviewed

Electrical properties of modulation doped Si/SiGe heterostructures grown on silicon on insulator substrates

K Alfaramawi, A Sweyllam, L Abulnasr, S Abboudy, E F El-Wahidy, L Di Gaspare and F Evangelisti
Physics of Semiconductors, Pts A and B, Vol.772, pp.1483-1484
AIP CONFERENCE PROCEEDINGS
01/01/2005
DOI: https://doi.org/10.1063/1.1994675

Abstract

Physical Sciences Physics Physics, Condensed Matter Science & Technology
We report on the growth and characterization of high-mobility 2DEGs on tensile strained Si grown on cubic SiGe alloy on SOI substrates. The electrical properties were investigated in the 4.2-300 K temperature range as a function of growth conditions and sample structure. Hall mobilities as high as 82000 cm(2)/V.s at T = 4.2 K were obtained in the best 2DEGs on SOL We found that the main mechanism limiting the mobility at low temperature is the ionized impurity scattering.

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