Abstract
In the present work, employing effective mass approximation, the potential energy band profile for the conduction band and valence bands is studied in a Ga1-xAlxN/GaN/Ga1-xAlxN (x = 0.2) and the free electron distribution is found. The self-consistent method is employed to obtain the energy eigenvalue and wavefunctions of charge carriers. The confined energies with the geometrical confinement are computed. The electron and hole potentials are computed from the Poisson equation. The effects of dielectric mismatch between the inner and the outer materials are inserted in the potential terms. The internal polarizations which are the addition of spontaneous and piezo electric polarization are included in the Hamiltonian. The transmission probability which is the ratio between the transmitted flux and incident flux is computed for a fixed quantum well. J-V characteristics are computed using the transfer matrix method. The current density with the applied voltage is computed for fixed Al concentration in the barrier material.