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Enhanced Surface Plasmon Coupling Effect with a Metal/SiO2/GaN Structure for Further Improving the Emission Efficiency of a Light-emitting Diode
Conference proceeding

Enhanced Surface Plasmon Coupling Effect with a Metal/SiO2/GaN Structure for Further Improving the Emission Efficiency of a Light-emitting Diode

Kun-Ching Shen, Cheng-Yen Chen, Yen-Cheng Lu, Che-Hao Liao, Chih-Yen Chen, Chieh Hsieh, C. C. Yang and IEEE
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), pp.1-2
01/01/2010

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated. (C)2010 Optical Society of America

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