Sign in
Back
Enhanced TFTs model using novel nano-composite high-k gate dielectric
Conference proceeding

Enhanced TFTs model using novel nano-composite high-k gate dielectric

A. Thabet, M. Atef and Y. A. Mobarak
Proceedings of the 2011 14th European Conference on Power Electronics and Applications, pp.1-3
08/2011

Abstract

Capacitance Dielectrics Electric potential Logic gates MOSFETs Nano-composite Gate Dielectric Thin film transistors Threshold voltage
This paper demonstrates an analytical suggested model for enhancing the performance of Thin-Film Transistors (TFTs) by replacing the conventional silicon dioxide gate dielectric with high-k gate dielectric novel nano-composite PVP/La 2 O 3 (k ox =25). Our suggested model has a Single nano-composite Material Gate SMG MOSFETs. Also, it has been studied the effects of the gate-dielectric permittivity, spacer oxide permittivity, gate length, and the width of TFTs structure.

Metrics

1 Record Views

Details