Abstract
First report on significant performance improvement of 450 nm blue edge-emitting laser in terms of optical linewidth (∼6.5 times), modulation bandwidth (∼16%) and SMSR (∼7.4 times) by employing self-injection locking scheme.
- Title
- Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication
- Creators - without role
- M. Hosne M. Shamim - University of PetroleumM. A. Shemis - University of PetroleumChao Shen - Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaHassan M. Oubei - Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaTien Khee Ng - Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaBoon S. Ooi - Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) division, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi ArabiaM. Z. M. Khan - University of PetroleumIEEE
- Publication Details
- 2018 Conference on Lasers and Electro-Optics (CLEO), pp.1-2
- Publisher
- OSA
- Identifiers
- 9941284908331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Conference proceeding