Abstract
Ta(N) film was synthesized by implanting the nitrogen ions in Ta films employing Plasma Immersion Ion implantation (PIII) technique. Silicon wafers coated with Ta were implanted with nitrogen at two different doses. Nitrogen ions implanted in the film render it to become Ta(N), which in effect hinders the grain boundary diffusion. The ion implantation was carried out for two doses 1015ions/cm2 and 1017ions/cm2 corresponding to low and high dose regime. Thereafter a copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. To evaluate the barrier properties of Ta(N) these samples were annealed up to 700 deg C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing.