Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

P. Majhi; H.C. Wen; H. Alshareef; K. Choi; R. Harris; P. Lysaght; H. Luan; Y. Senzaki; S.C. Song; B.H. Lee; C. Ramiller; IEEE

doi:10.1109/ICICDT.2005.1502594

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Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

P. Majhi, H.C. Wen, H. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S.C. Song, B.H. Lee, …

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, pp.69-72

2005

DOI: https://doi.org/10.1109/ICICDT.2005.1502594

Abstract

Channel bank filters

Dielectric substrates

Electrodes

Extrapolation

High K dielectric materials

High-K gate dielectrics

Inorganic materials

Robust stability

Silicon

Wet etching

An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the high-k metal gate stacks are discussed.

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Title: Evaluation and integration of metal gate electrodes for future generation dual metal CMOS
Creators - without role: P. Majhi - Sematech
H.C. Wen - Sematech
H. Alshareef - Texas Instruments
K. Choi
R. Harris
P. Lysaght
H. Luan
Y. Senzaki
S.C. Song
B.H. Lee
C. Ramiller
IEEE
Publication Details: 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, pp.69-72
Publisher: IEEE
Identifiers: 9941131908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding