Evaluation of 600 V Direct-Drive GaN HEMT and a Comparison to GaN GIT

Yousef Abdullah; He Li; Jin Wang; IEEE

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Conference proceeding

Evaluation of 600 V Direct-Drive GaN HEMT and a Comparison to GaN GIT

Yousef Abdullah, He Li, Jin Wang and IEEE

2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp.273-276

01/01/2017

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also, high reliability with optimized protection functions can be achieved. A comparison with a GaN gate injection transistor (GIT) is also presented. Both devices are rated at 600 V with similar current rating. Dynamic test results for both devices at 25 degrees C and 125 degrees C are presented.

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Title: Evaluation of 600 V Direct-Drive GaN HEMT and a Comparison to GaN GIT
Creators - without role: Yousef Abdullah - The Ohio State University
He Li - The Ohio State University
Jin Wang - The Ohio State University
IEEE
Publication Details: 2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp.273-276
Publisher: IEEE
Number of pages: 4
Identifiers: 9918389708331
Academic Unit: Majmaah University
Language: English
Resource Type: Conference proceeding