Abstract
Conference Title: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Conference Start Date: 2018, March 13 Conference End Date: 2018, March 16 Conference Location: Kobe, Japan In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO 2 ) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (104 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.