Abstract
A study of low frequency noise is made in Solid Phase Crystallised (SPC) polysilicon Thin Film Transistors (TFTs) issued from low temperature process (≤600° C). The study is performed in both below and above threshold regions. At first, a static electrical caracterisation of the transistors is carried out. Analysis of the low frequency noise in the TFTs shows that it can be related both to the Meyer-Neldel MN effect, and to the flatband voltage fluctuations due to the trapping/detrapping processes of carriers at the S
O
/Poly-S
interface. Furthermore, a new method of the channel carrier number calculation is proposed. Then, the apparent noise parameter
, based on the Hooge formula, is deduced. At low gate voltages
increases and reaches a maximum value close to the threshold voltage. This
singular behavior is then discussed.