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Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED
Conference proceeding

Extending quantum efficiency roll-over threshold with compositionally graded InGaN/GaN LED

Pawan Mishra, Tien Khee Ng, Bilal Janjua, Chao Shen, Jessica Eid, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi and IEEE
2014 IEEE PHOTONICS CONFERENCE (IPC), pp.22-23
IEEE Photonics Conference
01/01/2014

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
We report a significant improvement in the electrical characteristic of compositionally graded InGaN/GaN multiple-quantum-well (MQWs) micro-LED. The efficiency droop in this device occurred at similar to 20 times higher injection levels (similar to 275 A/cm(2)) compared to a conventional step-MQWs micro-LED (similar to 14 A/cm(2)).

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