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Fabrication of Nanostructured Al-doped ZnO Thin Film for Methane Sensing Applications
Conference proceeding   Peer reviewed

Fabrication of Nanostructured Al-doped ZnO Thin Film for Methane Sensing Applications

A. K. Shafura, N. D. Md Sin, N. E. I. Azhar, I. Saurdi, M. Uzer, M. H. Mamat, A. Shuhaimi, Salman A. H. Alrokayan, Haseeb A. Khan and M. Rusop
INTERNATIONAL CONFERENCE ON NANO-ELECTRONIC TECHNOLOGY DEVICES AND MATERIALS (IC-NET 2015), Vol.1733(1)
AIP Conference Proceedings
06/07/2016
DOI: https://doi.org/10.1063/1.4948883

Abstract

Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics
CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500 degrees C which has conductivity and sensitivity value of 3.3 x 10(-3) S/cm and 11.5%, respectively.

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