Abstract
Conference Title: 2014 International Conference on Electrical, Electronics and System Engineering (ICEESE) Conference Start Date: 2014, Dec. 9 Conference End Date: 2014, Dec. 10 Conference Location: Kuala Lumpur, Malaysia The use of high dielectric material for thin films capacitor has been known since the first ferroelectric materials were introduced. The capability to store large energy density would be the ideal criteria to pursue nanoscaled films capacitor applications. Nowadays, capacitor device becomes complex device rather than just focus at single function where ferroelectric material get involves. In this study, lead based titanate thin films ceramic will be fabricated by sol-gel spin coating method with typical multicoating layers to investigate the ferroelectric, dielectric properties, and capacitance characteristic. The measurements were based on 100 kHz and 1 MHz frequencies application which there's lies the significant finding of the dielectric materials property. Other, like surface profiler (KLA Tencor) is used as films thickness measurement that reports under 200nm thickness. PbTiO 3 metal-ferroelectric-metal device is going to be prepared by involves the indium tin oxide coated glass as substrate, whereas Al metal will be deposited as top electrode through thermal evaporator method.