Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs

H. Mahfoz-Kotb; L. Theolier; F. Morancho; K. Isoird; P. Dubreuil; T. Do Conto; IEEE; H Kotb

doi:10.1109/ISPSD.2008.4538959

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Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs

H. Mahfoz-Kotb, L. Theolier, F. Morancho, K. Isoird, P. Dubreuil, T. Do Conto, IEEE and H Kotb

2008 20th International Symposium on Power Semiconductor Devices and IC's, pp.303-306

05/2008

DOI: https://doi.org/10.1109/ISPSD.2008.4538959

Abstract

Boron

Chemicals

Dielectrics

Epitaxial layers

Filling

Insulated gate bipolar transistors

MOSFET circuits

Permittivity

Polyimides

Voltage

In this work, a new design of high voltage (1200 Volts range) power superjunction MOSFET (SJMOSFET) is presented: the deep trench SJMOSFET (DT-SJMOSFET). Besides, a new junction termination, consisting in a 70 mum width and 100 mum depth trench filled by a dielectric, is proposed. Simulation results show that this junction termination exhibits the same blocking voltage capability as the base cell (central cell). In addition, the termination breakdown voltage dependence on the dielectric critical electric field (E Cd ) and its permittivity (epsiv rd ) is studied. Finally, the possibility of filling the trench termination using low dielectric polyimide such as BenzoCycloButene (BCB) is successfully approved and the Chemical Mechanical Polishing of BCB is also discussed. These experimental results represent the key steps for a future complete fabrication process of DT-SJMOSFET.

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Title: Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs
Creators - without role: H. Mahfoz-Kotb - Laboratory for Analysis and Architecture of Systems
L. Theolier - Laboratory for Analysis and Architecture of Systems
F. Morancho - Laboratory for Analysis and Architecture of Systems
K. Isoird - Laboratory for Analysis and Architecture of Systems
P. Dubreuil - Laboratory for Analysis and Architecture of Systems
T. Do Conto - LAAS, CNRS, Toulouse
IEEE
H Kotb - King Faisal University
Publication Details: 2008 20th International Symposium on Power Semiconductor Devices and IC's, pp.303-306
Publisher: IEEE
Identifiers: 9920193208331
Academic Unit: King Faisal University
Language: English
Resource Type: Conference proceeding