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Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance
Conference proceeding   Peer reviewed

Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance

H. Ohta, M. Fujisawa, F. Elmasry, S. Okubo, Y. Fukuoka, H. Yoshitomi, S. Kitayama, T. Kita and O. Wada
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol.1399(1), pp.679-680
AIP Conference Proceedings
01/01/2011
DOI: https://doi.org/10.1063/1.3666559

Abstract

Engineering Engineering, Electrical & Electronic Physical Sciences Physics Physics, Applied Science & Technology Technology
Magnetic semiconductor GdN thin film has been studied by a conventional X-band electron spin resonance (ESR). Electron paramagnetic resonance (EPR) of GdN is observed at 100 K while the ferromagnetic resonance (FMR) is clearly observed at 4.2 K, which is confirmed by the typical angular dependence of FMR. The result will be discussed in connection with the magnetic properties obtained previously by our SQUID magnetometer measurement.

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