First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

Mohammed Abdul Majid; Ahmad Al-Jabr; Hassan M Oubei; Mohd Sharizal Alias; Tien Khee Ng; Dalaver H Anjum; Boon S Ooi

doi:10.1109/IPCon.2015.7323633

Back

Conference proceeding

First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

Mohammed Abdul Majid, Ahmad Al-Jabr, Hassan M Oubei, Mohd Sharizal Alias, Tien Khee Ng, Dalaver H Anjum and Boon S Ooi

12/11/2015

DOI: https://doi.org/10.1109/IPCon.2015.7323633

Abstract

Annealing

Current density

Lasers

Optical device fabrication

Photonic band gap

Power amplifiers

Power generation

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.

Metrics

1 Record Views

Details

Title: First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode
Creators - without role: Mohammed Abdul Majid
Ahmad Al-Jabr - King Abdullah University of Science and Technology
Hassan M Oubei - King Abdullah University of Science and Technology
Mohd Sharizal Alias - King Abdullah University of Science and Technology
Tien Khee Ng
Dalaver H Anjum - King Abdullah University of Science and Technology
Boon S Ooi - King Abdullah University of Science and Technology
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Identifiers: 9914158608331
Academic Unit: Effat University; King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding