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GHz Modulation Enabled Using Large Extinction Ratio Waveguide-Modulator Integrated with 404 nm GaN Laser Diode
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GHz Modulation Enabled Using Large Extinction Ratio Waveguide-Modulator Integrated with 404 nm GaN Laser Diode

Chao Shen, Changmin Lee, Tien Khee Ng, James S. Speck, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. Eldesouki, Boon S. Ooi and IEEE
2016 IEEE PHOTONICS CONFERENCE (IPC), pp.813-814
IEEE Photonics Conference
01/01/2016

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology
A 404-nm emitting InGaN-based laser diode with integrated-waveguide-modulator showing a large extinction ratio of 11.3 dB was demonstrated on semipolar (20 (2) over bar(1) over bar) plane GaN substrate. The device shows a low modulation voltage of -2.5V and similar to GHz -3 dB bandwidth, enabling 1.7 Gbps data transmission.

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