GaN Nanowires Synthesized by Electroless Etching Method

A. Najar; A. B. Slimane; D. H. Anjum; T. K. Ng; B. S. Ooi; IEEE

doi:10.1364/CLEO_AT.2012.JTh2A.101

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Conference proceeding

GaN Nanowires Synthesized by Electroless Etching Method

A. Najar, A. B. Slimane, D. H. Anjum, T. K. Ng, B. S. Ooi and IEEE

2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2

Conference on Lasers and Electro-Optics

01/01/2012

DOI: https://doi.org/10.1364/CLEO_AT.2012.JTh2A.101

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

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Details

Title: GaN Nanowires Synthesized by Electroless Etching Method
Creators - without role: A. Najar - King Abdullah University of Science and Technology
A. B. Slimane - King Abdullah Univ Sci & Technol, Photon Lab, Thuwal, Saudi Arabia
D. H. Anjum - King Abdullah University of Science and Technology
T. K. Ng - King Abdullah University of Science and Technology
B. S. Ooi - King Abdullah University of Science and Technology
IEEE
Publication Details: 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
Series: Conference on Lasers and Electro-Optics
Publisher: IEEE
Number of pages: 2
Identifiers: 9941777008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding