Abstract
The Al2O3 powder was embedded in indium tin oxide (ITO) using natural lithography for high efficiency GaN-based light-emitting diodes (LEDs). The 300-nm-size Al2O3 powder is coated on the first step thin ITO surface and the second step ITO was deposited by electron beam evaporator. The total ITO thickness was 250 nm which the first step and second step ITO thickness was 100 nm, 150 nm, respectively. The morphologies of the ITO surface were observed using a scanning electron microscope. The light output powers of the GaN-based LED with the embedded Al2O3 powder in the ITO was enhanced by 20 % compared with the conventional LED at 20 mA.