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Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications
Conference proceeding

Gate First Metal-Aluminum-Nitride PMOS Electrodes for 32nm Low Standby Power Applications

H.-C. Wen, S.C. Song, C.S. Park, C. Burham, G. Bersuker, K. Choi, M.A. Quevedo-Lopez, B.S. Ju, H.N. Alshareef, H. Niimi, …
2007 IEEE Symposium on VLSI Technology, pp.160-161
06/2007
DOI: https://doi.org/10.1109/VLSIT.2007.4339766

Abstract

Annealing Application software Capacitors Degradation Dielectric devices Electrodes High K dielectric materials High-K gate dielectrics Niobium compounds Voltage
The effective work function (EWF) of ternary metal-aluminum-nitride (M-Al-N, M=Ta, Ti, Mo, W) metal gate electrodes in high-k dielectric gate stacks has been investigated. With the addition of Al, the EWF can be tuned toward p-type (~5 eV) by 250 meV compared to the EWF of the binary metal nitride. Low threshold voltage (V t ) of ~ -0.35 V, an equivalent oxide thickness (EOT)~1.2 nm, and performance suitable for gate-first 32 nm low standby power applications are demonstrated.

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