Abstract
Gate first 0.59 nm EOT HfO x /metal gate stacks for 16 nm node application are demonstrated for the first time. By controlling O during HfO x deposition, ldquozerordquo low-k SiO x interface (ZIL) forms despite a 1020degC activation anneal. This 0.59 nm EOT is a 30% improvement over a state of the art 32 nm HK/MG technology. We compare and demonstrate for the first time the improved scalability of ZIL HfO x vs. exotic higher-k. Transistors made with ZIL HfO x show good interfaces (SS=70-80 mV/dec, N it = 5 times 10 10 /cm 2 ) and performance (10% I on -I off boost vs. EOT = 0.95 nm), despite mobility loss. Factors contributing to mobility loss in ZIL HfO x are discussed.