Abstract
Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO2 and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3 angstrom/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO2 exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.