Abstract
Conference Title: 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] Conference Start Date: 2016, June 26 Conference End Date: 2016, June 30 Conference Location: Toyama, Japan Selective doping and band-offset in core-shell nanowire (NW) structures using germanium (Ge)/ silicon (Si) can realize a type of high electron mobility transistor (HEMT) structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. Using these techniques, we obtained conclusive evidence of hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B doping concentration in the Si shell.