Sign in
Back
Growth mechanism of ALD-TiN and the thickness dependence of work function
Conference proceeding

Growth mechanism of ALD-TiN and the thickness dependence of work function

K. Choi, P. Lysaght, H.-C. Wen, K. Matthews, H. Alshareef, C. Huffman, R. Harris, H. Luan, P. Majhi, B.H. Lee, …
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), pp.103-104
2005
DOI: https://doi.org/10.1109/VTSA.2005.1497096

Abstract

Atomic layer deposition Dielectric films Dielectric measurements High K dielectric materials High-K gate dielectrics Instruments Silicon Surface cleaning Surface morphology Tin
We investigated the growth mechanism and work function of ALD-TiN film on SiO/sub 2/ and HfSiO films to understand how the work function is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.

Metrics

1 Record Views

Details