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Growth of AlN on etched 6H-SiC(0001) substrates via MOCVD
Conference proceeding

Growth of AlN on etched 6H-SiC(0001) substrates via MOCVD

W Hageman, Z Xie, J Edgar, D Zhuang, S Jagganathan, K Barghout, J Chaudhuri, A Rys and J Schmitt
Physica status solidi. A. Applied research, Vol.188(2), pp.783-787
ICNS 4: Fourth International Conference on Nitride Semiconductors, Denver, Colorado, USA, July 16-20, 2001. (Part A.2)
23/11/2001
DOI: https://doi.org/10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO;2-W

Abstract

Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics Surface cleaning, etching, patterning Surface treatments Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology

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