Abstract
Well-crystallized branched Indium (In)-doped ZnO nanowires were grown on silicon substrate via simple thermal evaporation process by using metallic zinc and indium powders in the presence of oxygen. The as-grown branched nanowires were examined in terms of their morphological, structural and optical properties using field emission scanning electron microscopy (FESEM) attached with energy dispersive spectroscopy (EDS), X-ray diffraction and room-temperature photoluminescence (PL) spectroscopy. The morphological and structural characterizations confirmed that the as-grown products are branched nanowires, grown in high-density and possessing well-crystalline structures. The room-temperature photoluminescence (PL) spectrum exhibited a very small UV emission and a broad band in the visible region indicating the presence of structural defects due to insertion of In-atoms in the lattices of as-grown nanowires. The presence of a strong green emission in the room-temperature PL spectrum demonstrates that these structures can be used for specific applications of ZnO-based phosphors, such as field emissive display technology, etc.