Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression

Guangyu Liu; Hongping Zhao; Jing Zhang; Nelson Tansu; IEEE

doi:10.1364/cleo_si.2011.cmee6

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Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression

Guangyu Liu, Hongping Zhao, Jing Zhang, Nelson Tansu and IEEE

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2

Conference on Lasers and Electro-Optics

01/01/2011

DOI: https://doi.org/10.1364/cleo_si.2011.cmee6

Abstract

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal-organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.

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Title: Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression
Creators - without role: Guangyu Liu - Lehigh University
Hongping Zhao - Lehigh University
Jing Zhang - Lehigh University
Nelson Tansu - Lehigh University
IEEE
Publication Details: 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
Series: Conference on Lasers and Electro-Optics
Publisher: IEEE
Number of pages: 2
Identifiers: 9942439108331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding