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Growths of Lattice-Matched AlInN/GaN for Optoelectronics Applications
Conference proceeding

Growths of Lattice-Matched AlInN/GaN for Optoelectronics Applications

Guangyu Liu, Hongping Zhao, Jing Zhang, Hua Tong, G. S. Huang, Nelson Tansu and IEEE
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY, pp.534-535
01/01/2010
DOI: https://doi.org/10.1109/PHOTONICS.2010.5698997

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
Growth studies of AlInN alloys with different indium contents were performed by metalorganic chemical vapor deposition. The optimized growth condition for lattice-matched alloy is obtained at growth temperature of 780 degrees C and pressure of 20 Torr.

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