Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile

Hongping Zhao; Guangyu Liu; Xiaohang Li; G.S. Huang; S.T. Penn; V. Dierolf; N. Tansu

Conference proceeding

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile

Hongping Zhao, Guangyu Liu, Xiaohang Li, G.S. Huang, S.T. Penn, V. Dierolf and N. Tansu

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, pp.1-2

05/2009

Abstract

(230.3670) Light-Emitting Diodes

(230.5590) Quantum-Well

Chemical technology

Chemical vapor deposition

Gallium nitride

Light emitting diodes

Optical devices

Physics

Quantum computing

Radiative recombination

Stimulated emission

Temperature

Wire and -Dot Devices

The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.

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Title: Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded-temperature profile
Creators - without role: Hongping Zhao - Lehigh University
Guangyu Liu - Lehigh University
Xiaohang Li - Lehigh University
G.S. Huang - Lehigh University
S.T. Penn
V. Dierolf
N. Tansu - Lehigh University
Publication Details: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference, pp.1-2
Publisher: IEEE
Identifiers: 9943000608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Conference proceeding