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HIGH MOBILITY SIGE SHELL-SI CORE OMEGA GATE PFETS
Conference proceeding

HIGH MOBILITY SIGE SHELL-SI CORE OMEGA GATE PFETS

Hemant Adhikari, Harlan R. Harris, Casey E. Smith, Ji-Woon Yang, Brian Coss, Srivatsan Parthasarathy, Bich-Yen Nguyen, Paul Patruno, Tejas Krishnamohan, Ian Cayrefourcq, …
PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, pp.136-138
01/01/2009
DOI: https://doi.org/10.1109/VTSA.2009.5159327

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Omega gate type pFETs with SiGe shell-Si core are demonstrated that show 30% mobility enhancement for (110) oriented fins and 46% mobility enhancement for (100) oriented fins compared to Si omega gate devices. Performance improvement is demonstrated because of higher mobility and inherent epitaxial strain, while the external resistance in the two SiGe and Si omega FETs is comparable. Performance can further be improved by uniaxial compressive stress.

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